Photonic Damascene Process for Integrated High-Q Microresonator Based Nonlinear Photonics

Abstract

High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD) has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with $1.35\mu \mathrm{m}$ thick waveguides and optical Q factors of $3.7\times 10^6$ and demonstrate single temporal dissipative Kerr soliton (DKS) based coherent optical frequency comb generation. Our newly developed process is interesting also for other material platforms, photonic integration and mid infrared Kerr comb generation.

Accepted for publication in Optica

References in corpus (5)

• All-optical signal processing platforms for CMOS compatible integrated nonlinear optics
• Silicon-Chip Mid-Infrared Frequency Comb Generation
• Integration of fiber coupled high-Q silicon nitride microdisks with atom chips
• High confinement, high yield Si3N4 waveguides for nonlinear optical application
• Low-noise on-chip frequency conversion by four-wave-mixing Bragg scattering in SiNx waveguides

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