Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities

Abstract

We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55$\mu$m. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency combs in cavities with both normal and anomalous dispersion at a wide range of wavelengths including 1.55$\mu$m. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long.

arXiv comment7 pages, 12 figures. Presented at 2017 International Topical Meeting on Microwave Photonics. Submitted to Journal of Lightwave Technology

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Cited by in corpus (3)

• Thermo-Optic Multi-Stability and Relaxation in Silicon Microring Resonators with Lateral Diodes
• Stability and variational analysis of cavity solitons under various perturbations
• Analysis of Kerr comb generation in silicon microresonators under the influence of two-photon absorption and free-carrier absorption