All-electric spin transistor based on a side-gate-modulated two-dimensional topological insulator

Abstract

We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and allelectric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a paramagnetic material.

5 pages, 5 figures

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Cited by in corpus (4)

• Dirac and Weyl Materials: Fundamental Aspects and Some Spintronics Applications
• Manipulation of Cooper pair entanglement in hybrid topological Josephson junctions
• Spin Berry phase in a helical edge state: Sz nonconservation and transport signatures
• A topological current divider