Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling

Abstract

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength $\lambda$ $\approx$ 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.

5 pages, 4 figures

References in corpus (4)

• The Raman Fingerprint of Graphene
• Dirac Cones and Minigaps for Graphene on Ir(111)
• Many-body interactions in quasi-freestanding graphene
• Kohn anomaly and interplay of electron-electron and electron-phonon interactions in epitaxial graphene

Cited by in corpus (4)

• Quasicrystalline 30° Twisted Bilayer Graphene as an Incommensurate Superlattice with Strong Interlayer Coupling
• Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy
• Spectroscopic investigations of phonons in epitaxial graphene
• Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe