Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Abstract

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate a method of generating spin polarization in monolayer transition metal dichalcogenides (TMD) by the circularly polarized optical pumping. The fully spin-polarized photocurrent is achieved through the valley dependent optical selection rules and the spin-valley locking in monolayer WS2, and electrically detected by a lateral spin-valve structure with ferromagnetic contacts. The demonstrated long spin lifetime, the unique valley contrasted physics and the spin-valley locking make monolayer WS2 an unprecedented candidate for semiconductor based spintronics.

References in corpus (15)

• Valley polarization in MoS2 monolayers by optical pumping
• The Valley Hall Effect in MoS2 Transistors
• Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
• Magnetic Control of Valley Pseudospin in Monolayer WSe2
• Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
• Breaking of valley degeneracy by magnetic field in monolayer MoSe2
• Electronic measurement and control of spin transport in Silicon
• Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
• Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
• Generation and Electric Control of Spin-Coupled Valley Current in WSe2
• Valley depolarization due to inter- and intra-valley electron-hole exchange interactions in monolayer MoS${}_2$
• Ultrafast Generation of Pseudo-magnetic Field for Valley Excitons in WSe2 Monolayers
• Anomalously Robust Valley Polarization and Valley Coherence in Bilayer WS2
• Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy
• Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Cited by in corpus (13)

• Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures
• Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe${}_2$
• Spin-orbit coupling induced valley Hall effects in transition-metal dichalcogenides
• Dynamics and Spin-Valley Locking Effects in Monolayer Transition Metal Dichalcogenides
• Long valley lifetime of free carriers in monolayer WSe2
• Spin Photovoltaic Effect in Magnetic van der Waals Heterostructures
• Spin/valley coupled dynamics of electrons and holes at the ${\text{MoS}}_2-{\text{MoSe}}_2$ interface
• Orbital gyrotropic magneto-electric effect and its strain engineering in monolayer Nb$X_2$
• Optically controlled single-valley exciton doublet states with tunable internal spin structures and spin magnetization generation
• Nonlinear dynamics of electromagnetic field and valley polarization in WSe${}_2$ monolayer
• Multiple types of spin textures and robust valley physics in MP${}_2$X${}_6$
• Largely enhanced photogalvanic effects in the phosphorene photodetector by strain-increased device asymmetry
• Local electric field induced spin photocurrent in ReS2