Net on-chip Brillouin gain based on suspended silicon nanowires
arXiv:1508.06318 · doi:10.1088/1367-2630/17/11/115005
Abstract
The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to , the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.
14 pages, 8 figures
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