Tunable narrowband microwave photonic filter created by stimulated Brillouin scattering from a Silicon nanowire

Abstract

We demonstrate the first functional signal processing device based on stimulated Brillouin scattering in a silicon nanowire. We use only 1 dB of on-chip SBS gain to create an RF photonic notch filter with 48 dB of suppression, 98 MHz linewidth, and 6 GHz frequency tuning. This device has potential applications in on-chip microwave signal processing and establishes the foundation for the first CMOS-compatible high performance RF photonic filter.

Cited by in corpus (10)

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• Brillouin Scattering Self-Cancellation
• Net on-chip Brillouin gain based on suspended silicon nanowires
• Integrated RF-photonic Filters via Photonic-Phononic Emit-Receive Operations
• Tunable RF-photonic filtering with high out-of-band rejection in silicon
• Tunable Photonic Radiofrequency Filter with An Ultra-high Out-Of-Band Rejection
• Universal Silicon Microwave Photonic Spectral Shaper
• Microwave filtering using forward Brillouin scattering in photonic-phononic emit-receive devices
• Thermal Brillouin noise observed in silicon optomechanical waveguide
• Stimulated Forward Brillouin Scattering in Subwavelength Silicon Membranes