Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

Abstract

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector, and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field induced intervalley scattering resulting in a reduced carrier mobility thereby damping the plasmonic response. We demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast THz optics and for passive protection of sensitive electromagnetic devices.

20 pages total with 4 figures

References in corpus (9)

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• High-Temperature Ultra-Broad UV-MIR High-Efficiency Absorber Based on Double Ring-Shaped Titanium Nitride Resonators
• Structurally Tunable Nonlinear Terahertz Metamaterials using Broadside Coupled Split Ring Resonators
• Manifestation of kinetic-inductance in spectrally-narrow terahertz plasmon resonances in thin-film Cd3As2