Energy splitting of image states induced by the surface potential corrugation of InAs(111)A

Abstract

By means of scanning tunneling spectroscopy (STS) we study the electronic structure of the III-V semiconductor surface InAs(111)A in the field emission regime (above the vacuum level). At high sample bias voltages (approaching +10 V), a series of well defined resonances are identified as the typical Stark shifted image states that are commonly found on metallic surfaces in the form of field emission resonances (FER). At lower bias voltages, a more complex situation arises. Up to three double peaks are identified as the first three FERs that are split due to their interaction with the periodic surface potential. The high corrugation of this potential is also quantified by means of density functional theory (DFT) calculations. Another sharp resonance not belonging to the FER series is associated with an unoccupied surface state.

6 pages, 4 figures

References in corpus (2)

• Potential Energy Landscape for hot electrons in periodically nanostructured graphene
• Role of the electric field in surface electron dynamics above the vacuum level

Cited by in corpus (4)

• Nanoscale probing of image-potential states and electron transfer doping in borophene polymorphs
• Quantum-well and modified image-potential states in thin Pb(111) films: an estimate for the local work function
• Probing Image Potential States on Topological Semimetal Antimony Surface
• Field-Emission Resonances in Thin Metallic Films: Nonexponential Decay of the Tunneling Current as a Function of the Sample-to-Tip Distance