Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology

Abstract

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.

4 pages and 4 figures

References in corpus (6)

• Optical Aharonov-Bohm effect in stacked type-II quantum dots
• Tunable optical Aharonov-Bohm effect in a semiconductor quantum ring
• Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
• A semiconductor exciton memory cell based on a single quantum nanostructure
• Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
• Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Cited by in corpus (4)

• Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots
• Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
• Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
• Topology driven g-factor tuning in type-II quantum dots