Magneto-transport study of top- and back-gated LaAlO${}_3$/SrTiO${}_3$ heterostructures

Abstract

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO${}_3$/SrTiO${}_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

15 pages, 6 figures

References in corpus (5)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Theory of spin-orbit coupling at LaAlO3/SrTiO3 interfaces and SrTiO3 surfaces
• Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure
• Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO${}_3$/SrTiO${}_3$ interface
• Nanoscale Electrostatic Control of Oxide Interfaces

Cited by in corpus (3)

• Gate-tunable band structure of the LaAlO${}_3$-SrTiO${}_3$ interface
• Electron trapping and detrapping in an oxide two-dimensional electron gas: The role of ferroelastic twin walls
• Coupling between tilts and charge carriers at polar-nonpolar perovskite interfaces