Photoinduced quantum spin and valley Hall effects and orbital magnetization in monolayer MoS2
arXiv:1504.04771 · doi:10.1103/PhysRevB.90.125438
Abstract
We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin-polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides.
10 pages and 2 figs
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- Photoinduced metallic Volkov-Pankratov states in semi-Dirac material
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- Photoinduced dc Hall current in few-layer black phosphorus with a gate-tunable Floquet gap
- Optically tunable spin Hall effect in periodically driven monolayer transition metal dichalcogenides
- Topological Properties of Bilayer Lattice Induced by Polarized Light
- Volkov-Pankratov states in a driven semimetal for a generic interface