A more accurate measurement of the ${}^{28}$Si lattice parameter

Abstract

In 2011, a discrepancy between the values of the Planck constant measured by counting Si atoms and by comparing mechanical and electrical powers prompted a review, among others, of the measurement of the spacing of ${}^{28}$Si {220} lattice planes, either to confirm the measured value and its uncertainty or to identify errors. This exercise confirmed the result of the previous measurement and yields the additional value $d_{220}=192014711.98(34)$ am having a reduced uncertainty.

12 pages, 17 figure, 1 table submitted to J Phys Chem Ref Data

References in corpus (2)

• Improved measurement results for the Avogadro constant using a 28Si-enriched crystal
• Lattice strain at c-Si surfaces: a density functional theory calculation

Cited by in corpus (10)

• CODATA Recommended Values of the Fundamental Physical Constants: 2014
• The correlation of the $N_A$ measurements by counting ${}^{28}$Si atoms
• Density functional theory calculations of the stress of oxidised (110) silicon surfaces
• Neutron interference from a split-crystal interferometer
• Diffraction effects in length measurements by laser interferometry
• Wavefront errors in a two-beam interferometer
• Defocused travelling-fringes in scanning triple-Laue x-ray interferometry
• Three-dimensional model of a split-crystal x-ray and neutron interferometer
• X-ray phase contrast topography to measure the surface stress and bulk strain in a silicon crystal
• Measurement of the miscut angle in the determination of the Si lattice parameter