Effect of edge dislocations on structural and electric properties of 4H-SiC

Abstract

The paper presents a study of two full-core, edge dislocations of opposite Burgers vectors in 4H-SiC, conducted using the first-principles density functional theory methods. We have determined the creation energy of the dislocations as a function of distance between their cores. The radial distribution function has been applied to examine strong impact of the dislocations on the local crystal structure. The analysis of the electronic structure reveals mid-gap levels induced by broken atomic bonds in the dislocation core. The maps of charge distribution and electrostatic potential have been calculated and the significant decrease of the electrostatic barriers in the vicinity of the dislocation cores has been quantified. The obtained results have been discussed in the light of available experimental data.

10 pages, 4 figures

References in corpus (2)

• Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations
• Strong Effects of Cation Vacancies on the Electronic and Dynamical Properties of FeO

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