Bad-metal behavior reveals Mott quantum criticality in doped Hubbard models

Abstract

Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through Dynamical Mean-Field Theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transition are confined to extremely low temperatures, while clear signatures of Mott quantum criticality emerge across much of the phase diagram. Remarkable scaling behavior is identified for the entire family of resistivity curves, with a quantum critical region covering the entire BM regime, providing not only insight, but also quantitative understanding around the MIR limit, in agreement with the available experiments.

5+6 pages

References in corpus (10)

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Cited by in corpus (10)

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• Molecular Quantum Materials: Electronic Phases and Charge Dynamics in Two-Dimensional Organic Solids
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• Doping driven metal-insulator transitions and charge orderings in the extended Hubbard model
• Critical Behavior in Doping-Driven Metal$-$Insulator Transition on Single-Crystalline Organic Mott-FET
• Transport in the 2D Fermi-Hubbard Model: Lessons from Weak Coupling
• The effect of local magnetic moments on spectral properties and resistivity near the interaction- and doping induced Mott transitions
• How to recognize the universal aspects of Mott criticality?
• Dynamic charge Kondo effect and a slave fermion approach to the Mott transition
• Dynamical Cluster Approximation Study of Electron Localization in the Extended Hubbard Model