Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

Abstract

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a ``bad metal'' state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the {\it charge} compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line.

arXiv comment4 pages, 3 figures

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• Effects of interaction strength, doping, and frustration on the antiferromagnetic phase of the two-dimensional Hubbard model
• Formation of an incoherent metallic state in Rh-doped Sr${}_2$IrO${}_4$
• Doping-driven Mott transition in La_{1-x}Sr_xTiO_3 via simultaneous electron and hole doping of t2g subbands
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• Doped Mott insulator on Penrose tiling
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• Coherent and incoherent bands in La and Rh doped Sr3Ir2O7
• Evolution of the spectral lineshape at the magnetic transition in Sr2IrO4 and Sr3Ir2O7