Unravelling the role of inelastic tunneling into pristine and defected graphene

Abstract

We present a first principles method for calculating the inelastic electron tunneling spectroscopy (IETS) on gated graphene. We reproduce experiments on pristine graphene and point out the importance of including several phonon modes to correctly estimate the local doping from IETS. We demonstrate how the IETS of typical imperfections in graphene can yield characteristic fingerprints revealing e.g. adsorbate species or local buckling. Our results show how care is needed when interpreting STM images of defects due to suppression of the elastic tunneling on graphene.

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
• The phonon dispersion of graphite by inelastic x-ray scattering
• Inelastic transport theory from first-principles: methodology and applications for nanoscale devices
• Monovalent impurities on graphene: midgap states and migration barriers
• Phonon mediated tunneling into graphene

Cited by in corpus (3)

• Improvements on non-equilibrium and transport Green function techniques: the next-generation transiesta
• Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene