Strain-induced modifications of transport in gated graphene nanoribbons
arXiv:1409.6666 · doi:10.1103/PhysRevB.90.245409
Abstract
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure, and finally becomes completely suppressed at larger strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudo-magnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which either originate from the coupling into Fabry-Perot states that extend through the system, or from the formation of states that are localized near the contacts, where the pseudo-magnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.
10 pages, 6 figures
References in corpus (25)
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Chiral tunneling and the Klein paradox in graphene
- Suspended Graphene: a bridge to the Dirac point
- A tight-binding approach to uniaxial strain in graphene
- All-graphene integrated circuits via strain engineering
- Macroscopic graphene membranes and their extraordinary stiffness
- Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
- Limits on electron quality in suspended graphene due to flexural phonons
- Charge Transport in Disordered Graphene-Based Low Dimensional Materials
- Conductance quantization and transport gap in disordered graphene nanoribbons
- Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
- Quantum conductance of graphene nanoribbons with edge defects
- Tunable stress and controlled thickness modification in graphene by annealing
- Symmetry-based approach to electron-phonon interactions in graphene
- Strained graphene: tight-binding and density functional calculations
- Pseudomagnetic fields and ballistic transport in a suspended graphene sheet
- Gaps tunable by electrostatic gates in strained graphene
- Effective contact model for transport through weakly-doped graphene
- Parity anomaly and Landau-level lasing in strained photonic honeycomb lattices
- Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density
- Gauge fields and interferometry in folded graphene
- Degeneracy doubling and sublattice polarization in strain-induced pseudo-Landau levels
- Pseudo-magnetic field distribution and pseudo-Landau levels in suspended graphene flakes