Observation of spin-charge conversion in CVD-grown single-layer graphene

Abstract

Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1*10-7. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.

21 pages, 3 figures

References in corpus (7)

• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Tunneling Spin Injection into Single Layer Graphene
• Graphene Spin Transistor
• Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
• Spin Injection into a Graphene Thin Film at Room Temperature
• Observation of spin-charge conversion in CVD-grown single-layer graphene

Cited by in corpus (5)

• Observation of spin-charge conversion in CVD-grown single-layer graphene
• Dynamical spin injection at a quasi-one-dimensional ferromagnet-graphene interface
• Spin current relaxation time in thermally evaporated pentacene films
• Spin-to-Charge Conversion in 2D Electron Gas and Single-layer Graphene Devices
• Spin pumping into two-dimensional electron systems