Observation of vacancy-induced suppression of electronic cooling in defected graphene

Abstract

Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude suppression of electronic cooling compared with clean graphene. The effect is stronger in graphene with more vacancies, confirming its vacancy-induced nature. The dependence of the coupling constant on the phonon temperature implies its link to the dynamics of disorder. Our study highlights the effect of disorder on electron-phonon interaction in graphene. In addition, the suppression of electronic cooling holds great promise for improving the performance of graphene-based bolometer and photo-detector devices.

13 pages, 4 figures

References in corpus (12)

• The Raman Fingerprint of Graphene
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Charged Impurity Scattering in Graphene
• A self-consistent theory for graphene transport
• Weak localisation magnetoresistance and valley symmetry in graphene
• Quantum transport of massless Dirac fermions in graphene
• Weak antilocalization in epitaxial graphene: evidence for chiral electrons
• Electron-phonon heat transfer in monolayer and bilayer graphene
• Supercollision cooling in undoped graphene
• Hot electron cooling by acoustic phonons in graphene
• Electron-phonon mediated heat flow in disordered graphene
• Observation of disorder-induced weakening of electron-phonon interaction in thin noble metal films