Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

Abstract

We present a beam-directed chemical technique for controlling the charge states of near-surface luminescence centers in semiconductors. Specifically, we fluorinate the surface of H-terminated diamond by electron beam irradiation in the presence of NF3 vapor. The fluorination treatment acts as a local chemical switch that alters the charge state of nitrogen-vacancy luminescence centers from the neutral to the negative state. The electron beam fluorination process is highly localized and can be used to control the emission spectrum of individual nanodiamonds and surface regions scanned by the electron beam

To Appear in Appl. Phys. Lett

References in corpus (3)

• High-sensitivity diamond magnetometer with nanoscale resolution
• High-fidelity projective readout of a solid-state spin quantum register
• Spontaneous Dissociation of Co2(CO)8 and Autocatalytic growth of Co on SiO2 : A Combined Experimental and Theoretical Investigation

Cited by in corpus (5)

• Diamond surface engineering for molecular sensing with nitrogen-vacancy centers
• Diamond Integrated Quantum Photonics: A Review
• Nanoscale Sensing Using Point Defects in Single-Crystal Diamond: Recent Progress on Nitrogen Vacancy Center-Based Sensors
• Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF${}_6$ plasma treatment
• Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes