Dispersion engineering of high-Q silicon microresonators via thermal oxidation

Abstract

We propose and demonstrate a convenient and sensitive technique for precise engineering of group-velocity dispersion in high-Q silicon microresonators. By accurately controlling the surface-oxidation thickness of silicon microdisk resonators, we are able to precisely manage the zero-dispersion wavelength while simultaneously further improving the high optical quality of our devices, with the optical Q close to a million. The demonstrated dispersion management allows us to achieve parametric generation with precisely engineerable emission wavelengths, which shows great potential for application in integrated silicon nonlinear and quantum photonics.

References in corpus (8)

• Optical frequency comb generation from a monolithic microresonator
• Octave-spanning frequency comb generation in a silicon nitride chip
• Spectral Line-by-Line Pulse Shaping of an On-Chip Microresonator Frequency Comb
• Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides
• Optical-fiber source of polarization-entangled photon pairs in the 1550nm telecom band
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• Surface Encapsulation for Low-Loss Silicon Photonics

Cited by in corpus (8)

• Silicon carbide for integrated photonics
• Broadband dispersion engineered microresonator on-a-chip
• Frequency Comb Assisted Broadband Precision Spectroscopy with Cascaded Diode Lasers
• Dynamics of platicons due to third-order dispersion
• Twin photon pairs in a high-Q silicon microresonator
• In-resonator variation of waveguide cross-sections for dispersion control of aluminum nitride micro-rings
• Quantum States of Higher-order Whispering gallery modes in a Silicon Micro-disk Resonator
• New-generation silicon photonics beyond the singlemode regime