Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi${}_2$Te${}_2$Se

Abstract

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi${}_2$Te${}_2$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi${}_2$Te${}_2$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi${}_2$Te${}_2$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

6 pages, 7 figures

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• Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi${}_2$Se${}_3$
• High repetition pump-and-probe photoemission spectroscopy based on a compact fiber laser system
• Transforming a Surface State of Topological Insulator by a Bi Capping Layer
• Engineering Topological quantum dot through planar magnetization in bismuthene
• Spin-polarized tunneling into helical edge states: asymmetry and conductances