Inducing Lifshitz transition by extrinsic doping of surface bands in topological crystalline insulator PbSnSe
arXiv:1403.4163 · doi:10.1103/PhysRevLett.112.146403
Abstract
Narrow gap semiconductor PbSnSe was investigated for topologically protected surface states in its rock-salt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed clear indication of two Dirac cones, eccentric about the time-reversal invariant point X of the surface Brillouin zone for all but the x=0 sample. Adsorption of alkalies gradually filled the surface bands with electrons, driving the x>0 topological crystalline insulator systems through Lifshitz transitions, and from a hole- to electron-like Fermi surface. The electron-doped bands in x>0 samples exhibited the full configuration of the Dirac cones, also confirming electron-hole symmetry of the surface bands.
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- Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy
- Topological phase diagram and saddle point singularity in a tunable topological crystalline insulator
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- Tunable Dirac interface states in topological superlattices
- Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped PbSnTe
- Fully gapped superconductivity in In-doped topological crystalline insulator PbSnTe
- Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film
- Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
- Sliding-induced topological transitions in bilayer biphenylene
- Fermi surface instabilities of symmetry-breaking and topological types on the surface of a three-dimensional topological insulator
- Possible Topological Superconductivity in a Topological Crystalline Insulator (PbSn)InTe