Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5
arXiv:1701.04737 · doi:10.1088/1367-2630/aa55a3
Abstract
Zirconium pentatelluride ZrTe, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 310 cm V s. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature . is found to scale approximately as , where the Hall carrier concentration is linked with the Fermi level by in a linearly dispersed Dirac band. This relation indicates monotonically increases with , which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.
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