Bulk Band Structure of Bi${}_2$Te${}_3$

Abstract

The bulk band structure of Bi${}_2$Te${}_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of \bite~when compared to LDA. Experimental and calculated results are compared in the spectral regions where distinct differences between the LDA and $GW$ results are present. Overall a superior agreement with $GW$ is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators.

8 pages, 5 Figures

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Cited by in corpus (5)

• Origin of the Electron-Phonon Interaction of Topological Semimetal Surfaces Measured with Helium Atom Scattering
• Observation of Planar Hall Effect in Topological Insulator -- Bi${}_2$Te${}_3$
• Observation of antiphase coherent phonons in the warped Dirac cone of Bi${}_2$Te${}_3$
• Bulk and surface electronic structure of Bi${}_4$Te${}_3$ from $GW$ calculations and photoemission experiments
• Spin dynamics of $3d$ and $4d$ impurities embedded in prototypical topological insulators