Control of the ionization state of 3 single donor atoms in silicon
arXiv:1403.1079 · doi:10.1103/PhysRevB.89.161404
Abstract
By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field in the presence of nearby source-drain electrodes.
18 pages, 5 figures, submitted to Physical Review B
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