Effect of modulations of doping and strain on the electron transport in monolayer MoS_2

Abstract

The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the low doping level under the strain-free condition. The applying a small strain (3%) can improve the maximum mobility to 1150 cm^2/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transition between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS_2.

publised version

References in corpus (5)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Valley polarization in MoS2 monolayers by optical pumping
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Symmetry-dependent phonon renormalization in monolayer MoS2 transistor

Cited by in corpus (4)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
• Phase Diagram of Electron Doped Dichalcogenides
• Valley-engineering mobilities in two-dimensional materials