Proximity Effects in Topological Insulator Heterostructures
arXiv:1401.4061 · doi:10.1088/1674-1056/22/9/097306
Abstract
Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent works on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have established the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications.
10 pages, 10 figures
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- Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions
- Quantum Transport in Weyl Semimetal Thin Films in the Presence of Spin-Orbit Coupled Impurities
- Electrical probe of spin-spiral order in quantum spin Hall/spin-spiral magnet van der Waals heterostructures