Proximity effects in a topological-insulator/Mott-insulator heterostructure
arXiv:1303.2781 · doi:10.1103/PhysRevB.87.161108
Abstract
We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized mid-gap states inside the MI region, which still have a remnant of the helical energy-spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling , largely enhances the electron mass inside the MI and also splits a single Dirac-cone at edge sites into the spatially-separated two Dirac-cones in the strong region.
5 pages, 4 figures
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Cited by in corpus (7)
- Topological Insulator Materials
- Rashba spin orbit coupling in the Kane-Mele-Hubbard model
- Proximity Effects in Topological Insulator Heterostructures
- Buried topological edge state associated with interface between topological band insulator and Mott insulator
- Valence Bond Phases in Kane-Mele-Heisenberg Model
- Spin-imbalance induced buried topological edge currents in Mott \& topological insulator heterostructures
- Electrical probe of spin-spiral order in quantum spin Hall/spin-spiral magnet van der Waals heterostructures