Doping of Bi2Te3 using electron irradiation

Abstract

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed in-situ as well as ex-situ in magnetic fields up to 14 T. The defects created by irradiation act as electron donors allowing the compensation of the initial hole-type conductivity of the material as well as the conversion of the conductivity from p- to n-type. The changes in carrier concentration are investigated using Hall effect and Shubnikov-de Haas (SdH) oscillations, clearly observable in the p-type samples before irradiation, but also after the irradiation-induced conversion of the conductivity to n-type. The SdH patterns observed for the magnetic field along the trigonal axis can be entirely explained assuming the contribution of only one valence and conduction band, respectively, and Zeeman-splitting of the orbital levels.

Final version

References in corpus (8)

• Topological Insulators with Inversion Symmetry
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Topological Surface States Protected From Backscattering by Chiral Spin Texture
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Gate-tuned normal and superconducting transport at the surface of a topological insulator
• Topological Anderson Insulator in Three Dimensions
• The fate of topological-insulator surface states under strong disorder
• Magnetothermoelectric properties of Bi2Se3

Cited by in corpus (10)

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• Persistent Optical Gating of a Topological Insulator
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• Stable topological insulators achieved using high energy electron beams
• Evidence for topological surface states in metallic single crystals of Bi2Te3
• Landau level spectroscopy of Bi${}_2$Te${}_3$
• Charge puddles in a completely compensated topological insulator
• Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime
• Asymmetric Cherenkov acoustic reverse in topological insulators
• Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration