Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interface

Abstract

The authors demonstrated that L21-ordered full-Heusler Co2FeSi (CFS) alloy film with thickness of 100 nm were formed by facing targets sputtering (FTS) method at a substrate temperature TS = 300 deg C. Degrees of L21- and B2- order for the film were 0.37, and 0.96, respectively. Furthermore, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by MgO-interface magnetic anisotropy were successfully formed by the FTS method. The CFS/MgO stacking layers showed PMA when dCFS was 0.6 nm <= dCFS <= 1.0 nm. The PMA in these structures resulted from the CFS/MgO interfacial perpendicular magnetic anisotropy.

References in corpus (3)

• Substituting the main group element in cobalt - iron based Heusler alloys: Co${}_2$FeAl${}_{1-x}$Si${}_x$
• Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co-Ka and Cu-Ka sources
• Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing

Cited by in corpus (5)

• Perpendicular magnetic anisotropy in Pt/Co-based full Heusler alloy/MgO thin films structures
• Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy
• Evolution of the interfacial perpendicular magnetic anisotropy constant of the Co${}_2$FeAl/MgO interface upon annealing
• First-principles investigations of orthorhombic-cubic phase transition and its effect on thermoelectric properties in cobalt-based ternary alloys
• Methods to induce perpendicular magnetic anisotropy in full-Heusler Co2FeSi thin layers in a magnetic tunnel junction structure