Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Abstract

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

18 Pages,5 figures

References in corpus (3)

• Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
• Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods
• Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells