19 citations · 31 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2013★ 6 cited
Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods
Chentian Shi, Chunfeng Zhang, Fan Yang +6
Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency dro…
cond-mat.mes-hall2013★ 6 cited
Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells
Fan Yang, Chunfeng Zhang, Chentian Shi +7
We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a…
cond-mat.mes-hall2011★ 19 cited
Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods
Bin Jiang, Chunfeng Zhang, Xiaoyong Wang +4
We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs.…