6 citations · 12 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2013★ 6 cited
Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods
Chentian Shi, Chunfeng Zhang, Fan Yang +6
Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency dro…
cond-mat.mes-hall2013★ 6 cited
Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells
Fan Yang, Chunfeng Zhang, Chentian Shi +7
We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a…