Local transport measurements on epitaxial graphene

Abstract

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.

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References in corpus (3)

• Raman spectroscopy as a versatile tool for studying the properties of graphene
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

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