Strain engineering of magnetic states of vacancy-decorated hexagonal boron nitride
arXiv:1305.5861 · doi:10.1063/1.4819266
Abstract
Novel materials with tunable magnetic states play a significant role in the development of next-generation spintronic devices. In this paper, we examine the role of biaxial strain on the electronic properties of vacancy-decorated hexagonal boron nitride (h-BN) monolayers using density functional theory calculations. We found that the strain can lead to switching of the magnetic state for h-BN monolayers with boron vacancy or divacancy. Our findings promise a new route for the operation of low-dimensional spintronic devices.
13 pages, 3 figures
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