Double injection in graphene p-i-n structures

Abstract

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.

10 pages, 11 figures

References in corpus (8)

• The electronic properties of graphene
• Graphene photodetectors for high-speed optical communications
• Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
• Transport measurements across a tunable potential barrier in graphene
• Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
• Slow imbalance relaxation and thermoelectric transport in graphene
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
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Cited by in corpus (8)

• Terahertz Science and Technology of Carbon Nanomaterials
• Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure
• Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
• Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures
• Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures
• Negative terahertz conductivity in disordered graphene bilayers with population inversion
• Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure
• High-frequency rectification in graphene lateral p-n junctions