Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films
arXiv:1212.6464 · doi:10.1063/1.4766739
Abstract
We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a few Tesla up to 60 Tesla. We demonstrate that the strong linear-like MR at high field can be well understood as the weak antilocalization phenomena described by Hikami-Larkin-Nagaoka theory. Our analysis suggests that in our system, a topological insulator, the elastic scattering time can be longer than the spin-orbit scattering time. We briefly discuss our results in the context of Dirac Fermion physics and 'quantum linear magnetoresistance'.
References in corpus (5)
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Electron and hole Dirac cone states in-pairs in Ba(FeAs) confirmed by magnetoresistance
- Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals
Cited by in corpus (6)
- Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi
- Magnetoresistance in two-component systems
- Unusual non saturating Giant Magneto-resistance in single crystalline Bi2Te3 topological insulator
- Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films
- Weak antilocalization effect due to topological surface states in BiSeTe
- Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys