Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys

Abstract

We report magnetoresistive properties of direct and indirect band gap Bismuth-Antimony (Bi-Sb) alloys. Band gap increases with magnetic field. Large positive magnetoresistance (MR) approaching to 400 % is observed. Low field MR experiences quadratic growth and at high field it follows a nearly linear behavior without sign of saturation. Carrier mobility extracted from low field MR data, depicts remarkable high value. Correlation between MR and mobility is revealed. We demonstrate that the strong nearly linear MR at high field can be well understood by classical method, co-build by Parish and Littlewood.

arXiv commentTo be published in Applied Physics Letters

References in corpus (12)

• Aharonov-Bohm interference in topological insulator nanoribbons
• Non-saturating magnetoresistance in heavily disordered semiconductors
• Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi${}_2$Se${}_3$ Nanoribbons
• Classical magnetotransport of inhomogeneous conductors
• Quantum oscillations in a topological insulator Bi_{1-x}Sb_{x}
• Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films
• Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi_{1-x}Sb_{x}
• Transport anomalies across the quantum limit in semimetallic Bi${}_{0.96}$Sb${}_{0.04}$
• Sb concentration dependent structural and resistive properties of polycrystalline Bi-Sb alloys
• Large magnetothermopower and Fermi surface reconstruction in Sb${}_2$Te${}_2$Se
• Temperature-dependent structural property and power factor of n type thermoelectric Bi0.90Sb0.10 and Bi0.86Sb0.14 alloys
• Large thermal Hall coefficient in bismuth

Cited by in corpus (3)

• Coupling-decoupling of conducting topological surface states in thick Bi${}_2$Se${}_3$ single crystals
• The effect of quenching from different temperatures on Bi 0.88 Sb 0.12 alloy
• Non-contact mutual inductance based measurement of an inhomogeneous topological insulating state in Bi2Se3 single crystals with defects