Theory of Defect-Induced Kondo Effect in Graphene: Effect of Zeeman Field
arXiv:1212.0942 · doi:10.1088/1742-6596/456/1/012018
Abstract
The effect of the Zeeman field on the defect-induced Kondo effect in graphene is investigated. The effective model of the Kondo effect is derived, and is analyzed on the basis of the numerical renormalization group method. It is found that, under the Zeeman field, at the border of the spin polarized state and the Kondo-Yosida singlet state, there is an unusual fixed point where the entropy of the defect is k_B ln2 and the expectation value of S^2_z is 1/8.
Proceedings of the 20th International Conference on High Magnetic Fields in Semiconductor Physics. To be published in J. Phys.: Conf. Ser. One reference is added
References in corpus (6)
- The numerical renormalization group method for quantum impurity systems
- Spin-half paramagnetism in graphene induced by point defects
- Tunable Kondo Effect in Graphene with Defects
- Phase transitions in the pseudogap Anderson and Kondo models: Critical dimensions, renormalization group, and local-moment criticality
- Localized Spins on Graphene
- Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study