Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study
arXiv:1205.2148 · doi:10.1143/JPSJ.81.063709
Abstract
An effective model that describes the Kondo effect due to a point defect in graphene is developed, taking account of the electronic state and the lattice structure of the defect. It is shown that this model can be transformed into a single-channel pseudogap Anderson model with a finite chemical potential. On the basis of the numerical renormalization group method, it is clarified that the experimentally observed gate-voltage dependence of the Kondo temperature is understood in this framework.
5 pages, 8 figures
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