Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

Abstract

The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1\times 10^{15}{\mathrm{n}}_{\mathrm{eq}}/{\mathrm{cm}}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb${}^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

arXiv comment20 pages, 9 figures, submitted to Nucl. Instr. and Meth. A

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Cited by in corpus (10)

• Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies
• Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
• Recent Results of the ATLAS Upgrade Planar Pixel Sensors R&D Project
• Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
• Performance of active edge pixel sensors
• Thin and edgeless sensors for ATLAS pixel detector upgrade
• Achievements of the ATLAS Upgrade Planar Pixel Sensors R&D Project
• Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
• Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
• Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades