Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities
arXiv:1211.1753 · doi:10.7566/JPSJ.82.084709
Abstract
Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal equilibrium, and a higher excitation results in more dominant nonequilibrium features. Although standard photon lasing has been experimentally observed in the high excitation regime, e-h pair binding can still remain even in the high-excitation regime theoretically. Therefore, the photoluminescence with a different photon lasing mechanism is predicted to be different from that with a standard photon lasing. In this paper, we report the temperature dependence of the change in photoluminescence with the excitation density. The second threshold behavior transited to the standard photon lasing is not measured at a low-temperature, high-excitation power regime. Our results suggest that there may still be an electron--hole pair at this regime to give a different photon lasing mechanism.
25 pages, 11 figures, to appear in J. Phys. Soc. Jpn
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Cited by in corpus (9)
- Exciton-polariton condensates
- Non-Hermitian phase transition from a polariton Bose-Einstein condensate to a photon laser
- Critical fluctuations at a many-body exceptional point
- High-energy side-peak emission of exciton-polariton condensates in high density regime
- Highly excited exciton-polariton condensates
- Photoluminescence and gain/absorption spectra of a driven-dissipative electron-hole-photon condensate
- Generating Functional Approach for Spontaneous Coherence in Semiconductor Electron-Hole-Photon Systems
- Photoluminescence of high-density exciton-polariton condensates
- Competition between horizontal and vertical polariton lasing in planar microcavities