Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications

Abstract

MnxGa films with high perpendicular anisotropy, coercivity and energy product have great application potential in ultrahigh-density perpendicular recording, permanent magnets, spin-transfer-torque memory and oscillators, magneto-resistance sensors and ferromagnetic metal/semiconductor heterostructure devices. Here we present a comprehensive diagram of effective magnetism-tailoring of perpendicularly magnetized MnxGa films grown on III-V semiconductor GaAs by using molecular-beam epitaxy for the first time, by systematically investigating the wide-range composition and detailed post-growth annealing effects. We show that the (001)-orientated MnxGa films with L10 or D022 ordering could be crystallized on GaAs in a very wide composition range from x=0.76 to 2.6. L10-ordered MnxGa films show robust magnetization, high remanent ratio, giant perpendicular anisotropy, high intrinsic and extrinsic coercivity, and large energy product, which make this kind of material favorable for perpendicular magnetic recording, high-performance spintronic devices and permanent magnet applications. In contrast, D022-ordered films exhibit lower perpendicular anisotropy and weaker magnetism. Post-growth annealing MnxGa films studies reveal high thermal-stability up to 450 oC, and effective tailoring of magnetic properties can be realized by prolonging annealing at 450 oC. These results would be helpful for understanding this kind of material and designing new spintronic devices for specific practical applications.

References in corpus (5)

• High spin polarization in epitaxial films of ferrimagnetic Mn3Ga
• Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product
• Large Coercivity in Nanostructured Rare-earth-free MnxGa Films
• Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications
• Spin injection from perpendicular magnetized ferromagnetic $\delta$-MnGa into (Al,Ga)As heterostructures

Cited by in corpus (16)

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• Switching of Perpendicular Magnetization by Spin-Orbit Torque
• Tailoring Magnetism of Perpendicularly Magnetized MnxGa Epitaxial Films on GaAs for Practical Applications
• Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films
• Anomalous Hall Effect in Chemically Disordered L10-Mn1.5Ga
• Anomalous Hall effect and spin orbit torques in MnGa/IrMn films: Modification from strong spin Hall effect of antiferromagnet
• Discovery of ferromagnetism with large magnetic anisotropy in ZrMnP and HfMnP
• Enhanced spin-orbit torques in MnAl/Ta films with improving chemical ordering
• Observation of orbital two-channel Kondo effect in a ferromagnetic L10-MnGa film
• Heteroepitaxial growth of tetragonal Mn${}_{2.7-x}$Fe${}_x$Ga${}_{1.3}$ (0 $⩽$ x $⩽$ 1.2) Heusler films with perpendicular magnetic anisotropy
• Composition-tuned magneto-optical Kerr effect in L10-MnxGa films with giant perpendicular anisotropy
• Engineering the polar magneto-optical Kerr effect in strongly strained L10-MnAl films
• Electrical Transport of perpendicularly magnetized L10-MnGa and MnAl films
• Influence of chemical stability on the fabrication of MnGa-based devices
• Investigating the intrinsic anomalous Hall effect in MnPt3 topological semimetal