Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)

Abstract

Thin films of the proposed topological insulator PdLuBi - a Heusler compound with the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-quality PdLuBi films was confirmed by X-ray spectrometry and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, although the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the PdLuBi films, observed by hard X-ray photoelectron spectroscopy, correspond perfectly to the ab-initio-calculated density of states.

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Cited by in corpus (6)

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• Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators
• Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi
• Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal
• Perspective: Heusler interfaces -- opportunities beyond spintronics?
• Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE