Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

Abstract

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi_Se antisite and partial Bi_2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy (STEM) in conjunction with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.

5 pages, 5 figures

References in corpus (1)

• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals

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