Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice

Abstract

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.

5 pages, 4 figures

References in corpus (2)

• Strain-induced Fermi contour anisotropy of GaAs 2D holes
• Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas

Cited by in corpus (7)

• Composite Fermions with a Warped Fermi Contour
• Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures
• Reorientation of the stripe Phase of 2D Electrons by a Minute Density Modulation
• Determination of the Fermi Contour and Spin-polarization of $\nu =3/2$ Composite Fermions via Ballistic Commensurability Measurements
• Tuning of Fermi Contour Anisotropy in GaAs (001) 2D Holes via Strain
• Effect of Landau quantization on linear magnetoresistance of periodically modulated two-dimensional electron gas
• Nonlocality, Correlations, and Magnetotransport in a Spatially Modulated Two-Dimensional Electron Gas