Strain-induced Fermi contour anisotropy of GaAs 2D holes
arXiv:0801.3106 · doi:10.1103/PhysRevLett.100.096803
Abstract
We report measurements of magneto-resistance commensurability peaks, induced by a square array of anti-dots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin-subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.
arXiv commentAccepted for publication in Phys. Rev. Lett
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- Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
- Tuning of Fermi Contour Anisotropy in GaAs (001) 2D Holes via Strain
- Pseudospin Polarization of Composite Fermions under Uniaxial Strain