Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas
arXiv:cond-mat/0502492 · doi:10.1143/JPSJ.74.1792
Abstract
The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by analyzing commensurability oscillation of the magnetoresistance. The electron density is varied either by applying a bias to a metallic back gate or by illumination. The amplitude decreases with increasing density, with the rate |dV_0/dn_e| roughly an order of magnitude larger for the former method. The result is interpreted in terms of the rate, dE_1/d(delta E_c), of the change in the first subband level E_1 in response to the variation of the conduction-band edge delta E_c above the heterointerface. The rate crucially depends on the thickness of the 2DEG.
9 pages, 7 figures, LaTeX2e with jpsj2 class
References in corpus (1)
Cited by in corpus (8)
- Hole-flux Composite Fermion Commensurability Oscillations
- Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice
- Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices
- Harmonic Content of Strain-induced Potential Modulation in Unidirectional Lateral Superlattices
- Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices
- Commensurability oscillations in the rf conductivity of unidirectional lateral superlattices: measurement of anisotropic conductivity by coplanar waveguide
- Effect of Landau quantization on linear magnetoresistance of periodically modulated two-dimensional electron gas
- Frequencies of the Edge-Magnetoplasmon Excitations in Gated Quantum Hall Edges